| PART |
Description |
Maker |
| 5N60L-X-TA3-T 5N60L-X-TM3-T 5N60G-X-TA3-T 5N60L-X- |
4.5 Amps, 600/650 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| NTD4N60-D |
Power MOSFET 4 Amps, 600 Volts N-Channel DPAK
|
ON Semiconductor
|
| 4N60 4N60L-X-TA3-T 4N60L-X-TM3-T 4N60G-X-T2Q-T 4N6 |
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2N60L-X-TA3-T 2N60L-X-TM3-T 2N60L-X-TMA-T 2N60G-X- |
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 7N60L-X-TA3-T 7N60G-X-T2Q-T 7N60G-X-TA3-T 7N60L-X- |
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTP6N60-D NTP6N60/D |
Power MOSFET 6 Amps600 Volts
Power MOSFET 6 Amps, 600 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| SPD5420TXV SPD5415 SPD5415S SPD5415SMS SPD5415SMSS |
3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| SHF1406SMS SHF1402SMS SHF1403SMS SHF1404SMS SHF140 |
40 AMPS 200- 600 VOLTS 30 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NTF3055-160T1 NTF3055-160T3 NTF3055-160T3LF NTF305 |
TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|2AI(D)|SOT-223
From old datasheet system
Power MOSFET 2.0 Amps, 60 Volts N?Channel SOT23(2A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
|
ONSEMI[ON Semiconductor]
|
